Drawing method, master plate manufacturing method, and drawing apparatus

A master plate manufacturing method, comprising:

• correcting a drawing parameter for a pattern drawn on a resist film on a surface of a substrate, the correction being based on drawing information, height information, and dimensional difference information, wherein
• the drawing information is design data for drawing the pattern on the resist film by irradiating the resist film with an electron beam,
• the height information indicates changes in surface height of the substrate,
• the dimensional difference information includes differences between a dimension of a pattern as indicated in the design data and a dimension of a pattern formed on the substrate by processing the substrate using a resist film patterned according to the drawing information as a mask, and
• the correction of the drawing parameter reduces a dimensional difference between design data and a pattern formed on a target portion on the surface of the substrate;
• drawing the pattern on the resist film on the surface of the substrate with the corrected drawing parameter using the electron beam;
• developing the resist film on which the pattern has been drawn with the corrected drawing parameter;
• and
• processing the substrate using the developed resist film as a mask.

A pattern drawing apparatus, comprising:

• a correction unit configured to correct a drawing parameter for a pattern drawn on a resist film on a surface of a substrate, the correction being based on drawing information, height information, and dimensional difference information, wherein:
• the drawing information is design data for drawing the pattern on the resist film by irradiating the resist film with an electron beam,
• the height information indicates changes in surface height of the substrate,
• the dimensional difference information includes differences between a dimension of a pattern as indicated in the design data and a dimension of a pattern formed on the substrate by processing the substrate using a resist film patterned according to the drawing information as a mask, and
• the correction of the drawing parameter reduces a dimensional difference between design data and a pattern formed on a target portion on the surface of the substrate;
• and
• a drawing unit that draws the pattern on the resist film by irradiating the resist film with an electron beam according to the corrected drawing parameter.