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US 2023/0157183 A1Published application
Tunnel barrier layer, magnetoresistance effect element, and method for manufacturing tunnel barrier layer
AssigneeTDK Corporation
InventorsShinto ICHIKAWA, Katsuyuki NAKADA
Life of this patent
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Abstract
A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.
Claims11
A tunnel barrier layer comprising:
- a non-magnetic oxide,
- wherein a crystal structure of the tunnel barrier layer includes a first structure showing a reflection from a face-centered cubic (FCC) lattice and a reflection from a {220} plane in a nano-electron beam diffraction using a transmission electron microscope.
Dependencies are inferred from the claim text.