Nanomaterial, preparation method thereof, and quantum dot light-emitting diode

Abstract

The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an In2O3 shell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the In2O3 shell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ In2O3 core shell structure, that is, prepare the nanomaterial. In the present disclosure, In2O3 having a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

Dependencies are inferred from the claim text.