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US 2023/0157014 A1Published application
3d memory device, measurement method thereof, and film measurement device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsFengrui Li, Shuo Zhang, Yuanxiang Zou, Wei Zhang, Yi Zhou
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Abstract
A three-dimensional (3D) memory device includes a stack structure including a first stack structure and a second stack structure over the first stack structure, and a barrier layer disposed in a first channel hole in the first stack structure.
Claims20
A three-dimensional (3D) memory device, comprising:
- a stack structure comprising a first stack structure and a second stack structure over the first stack structure;
- and
- a barrier layer disposed in a first channel hole in the first stack structure.
A method for measuring a three-dimensional (3D) memory device, comprising:
- forming a first stack structure over a substrate;
- forming a first channel hole in the first stack structure;
- forming a barrier layer in the first channel hole;
- forming a second stack structure on the first stack structure, the first stack structure, and the second stack structure constituting a stack structure;
- emitting a signal having a wavelength within a first range to the stack structure;
- and
- obtaining a thickness of the second stack structure according to a reflected signal within the first range.
4 more elements
A method for manufacturing a three-dimensional (3D) memory device, comprising:
- providing a substrate;
- forming a first stack structure over the substrate;
- forming a first channel hole in the first stack structure;
- forming a barrier layer in the first channel hole;
- and
- forming a second stack structure on the first stack structure.
3 more elements
Dependencies are inferred from the claim text.