Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory

A semiconductor structure, the semiconductor structure being manufactured by a method for manufacturing a semiconductor structure, the method for manufacturing the semiconductor structure comprising:

• providing a substrate, wherein the substrate comprises a plurality of active areas;
• forming a plurality of bit line contact mask structures above the plurality of active areas, wherein each of the plurality of bit line contact mask structures at least covers one active area terminal;
• performing downward etching along the plurality of bit line contact mask structures to form a node contact hole in the active area terminal, and filling the node contact hole with a semiconductor material to form a first node contact structure;
• and
• forming a plurality of bit line structures above the plurality of active areas, and filling continuously gaps between the plurality of bit line structures with the semiconductor material until a second node contact structure is formed, wherein the first node contact structure and the second node contact structure collectively form a node contact structure.

A semiconductor memory, comprising a semiconductor structure, the semiconductor structure being manufactured by a method for manufacturing a semiconductor structure, the method for manufacturing the semiconductor structure comprising:

• providing a substrate, wherein the substrate comprises a plurality of active areas;
• forming a plurality of bit line contact mask structures above the plurality of active areas, wherein each of the plurality of bit line contact mask structures at least covers one active area terminal;
• performing downward etching along the plurality of bit line contact mask structures to form a node contact hole in the active area terminal, and filling the node contact hole with a semiconductor material to form a first node contact structure;
• and
• forming a plurality of bit line structures above the plurality of active areas, and filling continuously gaps between the plurality of bit line structures with the semiconductor material until a second node contact structure is formed, wherein the first node contact structure and the second node contact structure collectively form a node contact structure.