Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorYu-Ying LIN
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a bitline, a bitline contact and a land pad. The bitline is over the substrate. The bitline contact is in contact with a bottom of the bitline and in the substrate. The bitline contact includes a first portion and a second portion below the first portion, and the first portion is wider than the second portion from a cross-section view. A word line is adjacent to the bitline contact. A land pad is on the substrate, and the land pad is adjacent to the word line, such that the word line is between the bitline contact and the land pad.
Claims18
A semiconductor device, comprising:
- a substrate;
- a bitline over the substrate;
- a bitline contact in contact with a bottom of the bitline and in the substrate, wherein the bitline contact comprises a first portion and a second portion below the first portion, the first portion is wider than the second portion in a cross-section view;
- a word line adjacent to the bitline contact;
- and
- a land pad on the substrate, wherein the land pad is adjacent to the word line, such that the word line is between the bitline contact and the land pad.
A method of forming a semiconductor device, comprising:
- forming a first photoresist layer on a substrate, wherein the first photoresist layer has an opening exposing a portion of the substrate;
- forming an implant region in the portion of the substrate by implanting a first dopant into the substrate by using the first photoresist layer as a mask;
- removing the first photoresist layer over the substrate;
- forming a second photoresist layer over the substrate, wherein the second photoresist layer partially covers the implant region;
- performing a first etching process to remove the implant region such that a recess is formed in the substrate;
- performing a second etching process to remove a portion of the substrate to form a trench in the substrate, wherein the trench is narrower than the recess in the substrate;
- and
- depositing a semiconductive material in the recess and the trench to form a bitline contact in the substrate.
Dependencies are inferred from the claim text.