3-d dram structures and methods of manufacture
AssigneeApplied Materials, Inc.
InventorsChang Seok Kang, Tomohiko Kitajima, Nitin K. Ingle, Sung-Kwan Kang
Life of this patent
Estimating the term…
Abstract
Memory devices incorporating bridged word lines are described. The memory devices include a plurality of active regions spaced along a first direction, a second direction and a third direction. A plurality of conductive layers is arranged so that at least one conductive layer is adjacent to at least one side of each of the active regions along the third direction. A conductive bridge extends along the second direction to connect each of the conductive layers to one or more adjacent conductive layer. Some embodiments include an integrated etch stop layer. Methods of forming stacked memory devices are also described.
Claims14
A memory device comprising:
- a plurality of active regions spaced along a first direction, a second direction and a third direction;
- a plurality of conductive layers arranged so that at least one conductive layer is adjacent to at least one side of each of the active along the third direction;
- and
- a conductive bridge extending along the second direction and connecting each conductive layer to one or more adjacent conductive layer.
A memory device comprising:
- a plurality of pairs of active regions, the pairs spaced along a first direction, a second direction and a third direction;
- a plurality of bit lines extending along the third direction between pairs of active regions spaced in the first direction;
- a plurality of conductive layers arranged so that at least one conductive layer is adjacent to at least one side of each of the active regions, the at least one side being located along the third direction relative to the active region;
- and
- a conductive bridge extending along the second direction connecting each conductive layer to one or more adjacent conductive layer.
Dependencies are inferred from the claim text.