Memory unit, semiconductor module, dimm module, and manufacturing method for same
AssigneeUltramemory Inc.
InventorsFumitake OKUTSU, Takatoshi MASUDA
Life of this patent
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Abstract
A memory unit having a plurality of memory chips comprises: the memory unit that has a plurality of memory chips that are stacked; and protruding terminals that are disposed protruding from a side surface along the stacking direction of the memory unit, wherein the protruding terminals have surfaces that are positioned in a direction orthogonal to the protrusion direction, and between said surfaces, the surface roughness of a surface facing one way is greater than the surface roughness of a surface facing the other way.
Claims18
A memory unit having a plurality of memory chips, the memory unit comprising:
- the plurality of memory chips put in a stack;
- and
- a protruding terminal disposed in the memory unit and protruding from a side surface thereof along a stacking direction,
- wherein one of opposite-facing surfaces of the protruding terminal in a direction intersecting with a protruding direction thereof has a greater surface roughness than the other.
A semiconductor module having a plurality of memory chips, the semiconductor module comprising:
- a memory substrate having a communication circuit and a power terminal exposed on one surface thereof, which is a placement surface;
- at least one memory unit placed over the placement surface of the memory substrate, the at least one memory unit including the plurality of memory chips put in a stack;
- and
- a power supply plate disposed on an exposed surface of the memory unit and electrically connected to the power terminal, wherein
- the memory substrate has a communication circuit,
- the memory chips have, at one end thereof adjacent to the memory substrate, a communication part configured to communicate with the communication circuit in a contactless manner, and
- the memory chips have a protruding terminal protruding from at least one surface that is not opposed to the placement surface of the memory substrate and that is different from surfaces facing in the stacking direction.
A method for manufacturing a memory unit having a plurality of memory chips, the method comprising:
- a memory unit formation step of forming memory units by stacking memory wafers having the plurality of memory chips, a scribe area, and protruding terminals that span the memory chips and the scribe area;
- and
- a singulation step of performing etching on the scribe area, except for the protruding terminals therein, thereby dividing the memory wafers into the individual memory units and exposing the protruding terminals.
Dependencies are inferred from the claim text.