Electronic device and electrostatic discharge protection circuit

An electrostatic discharge (ESD) protection circuit protecting a first transistor which is coupled between a first electrode and a second electrode and is a high electron mobility transistor (HEMT), comprising:

• a resistance element coupled between a control electrode and a gate of the first transistor;
• a second transistor;
• and
• a third transistor coupled to the second transistor in series between the control electrode and the second electrode,
• wherein:
• in response to an ESD event occurring at the control electrode and the second electrode is coupled to ground, the second transistor and the third transistor are turned on, or
• in response to the ESD event not occurring and a voltage of the control electrode being higher than a voltage of the second electrode, the second transistor is turned off, or
• in response to the ESD event not occurring and the voltage of the control electrode being lower than the voltage of the second electrode, the third transistor is turned off.