Red light-emitting diode with phosphide epitaxial heterostructure grown on silicon

A light source comprising:

• a silicon substrate;
• a GaP buffer layer on the silicon substrate;
• and
• a plurality of mesa structures on the GaP buffer layer, each of the plurality of mesa structures including:
• a first doped GaP contact layer on the GaP buffer layer;
• an active region including:
• a plurality of InGaP quantum barrier layers;
• and
• one or more InGaAsP quantum well layers, each of the one or more InGaAsP quantum well layers being sandwiched by two InGaP quantum barrier layers of the plurality of InGaP quantum barrier layers;
• and
• a second doped GaP contact layer on the active region.

A micro-light emitting diode (micro-LED) device comprising:

• a silicon backplane including drive circuits formed thereon;
• and
• an array of micro-LEDs bonded to the silicon backplane, wherein each micro-LED of the array of micro-LEDs includes:
• a first doped GaP contact layer;
• an active region including:
• a plurality of InGaP quantum barrier layers;
• and
• one or more InGaAsP quantum well layers, wherein each of the one or more InGaAsP quantum well layers is sandwiched by two InGaP quantum barrier layers of the plurality of InGaP quantum barrier layers and is configured to emit red light;
• and
• a second doped GaP contact layer on the active region.