Thin-film led array with low refractive index patterned structures and reflector
AssigneeLumileds LLC
InventorsToni Lopez, Isaac Wildeson, Erik William Young
Life of this patent
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Abstract
Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.
Claims20
A light emitting diode (LED) device comprising:
- a nucleation layer on a substrate, the nucleation layer comprising a first III-nitride material;
- a patterned dielectric layer on a top surface of the nucleation layer, the patterned dielectric layer comprising a first plurality of features, a second plurality of features adjacent the first plurality of features, and a plurality of spaces between the first plurality of features and the second plurality of features, the first plurality of features and the second plurality of features protruding from a top surface of the nucleation layer, the second plurality of features having a second height greater than a first height of the first plurality of features, and the plurality of spaces exposing a top surface of the nucleation layer;
- a reflector layer on a surface of the second plurality of features distal from the nucleation layer;
- a III-nitride layer on the first plurality of features and on the plurality of spaces, the III-nitride layer comprising a second III-nitride material;
- and
- a metal contact aligned with and directly contacting the second plurality of features.
A method of manufacturing, comprising:
- depositing a nucleation layer on a substrate, the nucleation layer comprising a first III-nitride material;
- depositing a dielectric layer on a top surface of the nucleation layer, the dielectric layer comprising a low refractive index dielectric material;
- patterning the dielectric layer to form a patterned surface having a first plurality of features, a second plurality of features adjacent the first plurality of features, and having a plurality of spaces between the first plurality of features and the second plurality of features, the first plurality of features and the second plurality of features protruding from a top surface of the nucleation layer, the second plurality of features having a second height and a second width greater than a first height and a first width of the first plurality of features, and the plurality of spaces exposing a top surface of the nucleation layer;
- depositing a reflector layer on a surface of the second plurality of features distal from the nucleation layer;
- epitaxially growing a III-nitride layer on the patterned surface, the III-nitride layer comprising a second III-nitride material;
- and
- forming a metal contact aligned with and directly contacting the second plurality of features.
Dependencies are inferred from the claim text.