Light-emitting diode and method of manufacturing the same, and display device
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorHu MENG
Life of this patent
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Abstract
A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.
Claims20
A light-emitting diode, comprising:
- a first semiconductor layer;
- a second semiconductor layer;
- a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
- and
- a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer, wherein the barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.
The light-emitting diode according to claim I , wherein the first semiconductor layer is a P-type semiconductor layer and the second semiconductor layer is an N-type semiconductor layer;
- and
- the barrier layer includes a first barrier layer covering at least part of a side face of the P-type semiconductor layer, and a work function of the first harrier layer is less than a work function of the P-type semiconductor layer.
A method of manufacturing a light-emitting diode, comprising:
- providing a base;
- forming, on the base, a second semiconductor layer, a light-emitting layer and a first semiconductor layer sequentially on top of one another;
- patterning the first semiconductor layer to remove a part of the first semiconductor layer at an edge of a light-emitting region of the light-emitting diode;
- forming a first barrier film at a side of the base at which the patterned first semiconductor layer has been formed;
- and
- patterning the first barrier film to retain a part of the first barrier film covering a side face of the patterned first semiconductor layer and form a first barrier layer;
- wherein the first barrier layer is configured to form a charge depletion region between the first barrier layer and the first semiconductor layer.
Dependencies are inferred from the claim text.