Semiconductor Component and Process for Manufacturing a Semiconductor Component

A semiconductor component configured to emit radiation of a first wavelength range and a second wavelength range, the semiconductor component comprising:

• a semiconductor body having an active region configured to generate electromagnetic primary radiation and an emission area;
• a first dielectric mirror layer;
• a converter layer configured to convert radiation generated in the semiconductor component to radiation of the second wavelength range;
• and
• a second dielectric mirror layer,
• wherein the first dielectric mirror layer and the converter layer are arranged between the emission area and the second dielectric mirror layer,
• wherein the first dielectric mirror layer is transmissive for radiation of the first wavelength range incident at angles of incidence in a predetermined first angular range and reflective for radiation of the first wavelength range incident at angles of incidence in a predetermined second angular range, and
• wherein the second dielectric mirror layer is transmissive for radiation of the second wavelength range incident at angles of incidence in the first angular range and reflective for radiation of the second wavelength range incident at angles of incidence in the second angular range.

A method for manufacturing a semiconductor component, the method comprising:

• providing at least one semiconductor body;
• depositing a first dielectric mirror layer on an emission area of the semiconductor body, wherein the first dielectric mirror layer is transmissive for radiation of a first wavelength range incident at angles of incidence in a predetermined first angular range and reflective for radiation of the first wavelength range incident at angles of incidence in a predetermined second angular range;
• depositing a converter layer on the emission area, wherein the converter layer is configured to convert radiation generated in the semiconductor component into radiation of a second wavelength range;
• and
• depositing a second dielectric mirror layer on the emission area, wherein the second dielectric mirror layer is transmissive for radiation of the second wavelength range incident at angles of incidence in the first angular range and reflective for radiation of the second wavelength range incident at angles of incidence in the second angular range.