Silicon photodetector using randomly arranged metal nanoparticles and method for manufacturing same

A method for manufacturing a silicon photodiode, the method comprising:

• forming a buffer layer on a silicon substrate;
• forming a first photoresist pattern on the silicon substrate on which the buffer layer is formed, and then implanting impurities of a first conductivity type to form a first conductive region;
• forming a second photoresist pattern to be spaced apart from the first conductive region on the silicon substrate, on which the buffer layer is formed, and the implanting impurities of a second conductivity type to form a second conductive region;
• removing the buffer layer from the silicon substrate, on which the first conductive region and the second conductive region are formed, with a hydrophobic solution;
• depositing an island-shaped metal layer on the silicon substrate from which the buffer layer is removed;
• thermally treating the silicon substrate, on which the metal layer is deposited, to convert the metal layer into metal nanoparticles;
• forming an antireflective layer on the silicon substrate to cover the metal nanoparticles;
• and
• forming a first contact, penetrating through the antireflective layer to be connected to the first conductive region, and a second contact penetrating through the antireflective layer to be connected to the second conductive region.

A silicon photodiode comprising:

• a silicon substrate having a first conductive region and a second conductive region disposed to be vertically spaced apart from the first conductive region;
• a plurality of metal nanoparticles formed on the silicon substrate and arranged randomly on the first conductive region;
• an antireflective layer covering the metal nanoparticles;
• a first contact penetrating through the antireflective layer to be connected to the first conductive region;
• and
• a second contact connected to the second conductive region.