Semiconductor device

A semiconductor device, comprising:

• a multi-stacked polysilicon structure comprising:
• a first portion of a first polysilicon-based layer disposed above a first portion of a substrate, and
• one or more second polysilicon-based layers disposed above the first portion of the first polysilicon-based layer;
• a polysilicon-based device comprising:
• a second portion of the first polysilicon-based layer disposed above one or more second portions of the substrate,
• wherein a first height associated with the multi-stacked polysilicon structure is greater than a second height associated with the polysilicon-based device;
• and
• an inter-layer dielectric,
• wherein a portion of the inter-layer dielectric is disposed between the multi-stacked polysilicon structure and the polysilicon-based device.

A semiconductor device, comprising:

• a first multi-stacked polysilicon structure comprising:
• a first portion of a first polysilicon-based layer disposed above a first portion of a substrate, and
• one or more second polysilicon-based layers disposed above the first portion of the first polysilicon-based layer;
• a polysilicon-based device comprising:
• a second portion of the first polysilicon-based layer disposed above one or more second portions of the substrate,
• wherein a first height associated with the first multi-stacked polysilicon structure is greater than a second height associated with the polysilicon-based device;
• and
• a second multi-stacked polysilicon structure,
• wherein the polysilicon-based device is positioned between the first multi-stacked polysilicon structure and the second multi-stacked polysilicon structure.