# US 2023/0155029 A1 · Doped polar layers and semiconductor device incorporating same

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- Number: US 2023/0155029 A1
- Document ID: US20230155029A1
- Status: Published application
- Kind: A1
- Application number: 17/815,100
- Filed: 2022-07-26
- Published: 2023-05-18
- Earliest claimed: 2019-04-08
- Assignees: Kepler Computing Inc.
- Applicants: Kepler Computing Inc.
- Inventors: Ramesh Ramamoorthy; Sasikanth Manipatruni; Gaurav Thareja
- Web page: https://patentgrep.com/patent/US20230155029A1

## CPC

- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10B 53/30: characterised by the memory core region
- H10D 1/684: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers}
- H10D 1/688: {comprising barrier layers to prevent diffusion of hydrogen or oxygen}
- H10D 1/692: {Electrodes}
- H10D 1/694: {comprising noble metals or noble metal oxides}
- H10D 10/861: {having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon}
- H10D 30/0415: {of FETs having ferroelectric gate insulators}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 84/133: {the built-in components being capacitors or resistors}
- H10B 12/312: {with a bit line higher than the capacitor}
- H10B 12/36: {the transistor being a FinFET}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a capacitor comprises a crystalline polar layer comprising a base polar material substitutionally doped with a dopant. The base polar material comprises one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements, such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV.

## Claims

### Claim 1

A capacitor, comprising:
a crystalline polar layer comprising a base polar material substitutionally doped with a dopant;
the base polar material comprising one or more metal elements and one or both of oxygen or nitrogen; and
the dopant comprising a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements, such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV.