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US 2023/0155026 A1Published application
Semiconductor device and semiconductor apparatus including the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHagyoul BAE, Dukhyun CHOE, Jinseong HEO, Yunseong LEE, Seunggeol NAM, Hyunjae LEE
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Abstract
Provided are a semiconductor device and a semiconductor apparatus including the semiconductor device. The semiconductor device includes a substrate having a channel layer comprising a dopant, a ferroelectric layer on the channel layer; and a gate on the ferroelectric layer. The channel layer has a doping concentration of 1×1015 cm−3 to 1×1021 cm−3.
Claims25
A semiconductor device comprising:
- a substrate having a channel layer on or in the substrate, the channel layer comprising a dopant;
- a ferroelectric layer on the channel layer;
- and
- a gate on the ferroelectric layer,
- wherein the channel layer has a doping concentration of greater than or equal to 1×1015 cm−3 and less than or equal to 1×1021 cm−3.
2 more elements
A semiconductor apparatus comprising:
- a field effect transistor;
- and
- a two-terminal electrical component electrically connected to the field effect transistor,
- wherein the field effect transistor comprises:
- a substrate having a channel layer on or in the substrate, the channel layer comprising a dopant;
- a ferroelectric layer on the channel layer;
- and
- a gate provided on the ferroelectric layer,
- wherein the channel layer has a doping concentration of greater than or equal to 1×1015 cm−3 and less than or equal to 1×1021 cm−3.
6 more elements
Dependencies are inferred from the claim text.