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US 2023/0155023 A1Published application
Power Transistor IC with Thermopile
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Andres Arturo Blanco, Orlando Lazaro
Life of this patent
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Abstract
IC apparatus, and manufacturing methods therefor, that include a power transistor and a thermoelectric device. The power transistor is constructed in a plurality of layers formed over a semiconductor substrate. The thermoelectric device is formed in one or more of the plurality of layers and is sensitive to temperature differences within the IC apparatus resulting from operation of the power transistor.
Claims20
An integrated circuit (IC) apparatus, comprising:
- a power transistor constructed in a plurality of layers formed in or over a semiconductor substrate;
- a thermoelectric device formed in one or more of the plurality of layers;
- and
- first and second interconnections respectively electrically connected to first and second terminals of the thermoelectric device, the thermoelectric device configured to produce a voltage difference between the first and second interconnections in response to temperature differences within the IC apparatus resulting from operation of the power transistor.
1 more element
A method of manufacturing an integrated circuit (IC), the method comprising:
- forming a power transistor in a plurality of layers formed in or over a semiconductor substrate;
- and
- forming in one or more of the plurality of layers a thermoelectric device having first and second terminals, the thermoelectric device configured to produce a voltage difference between the first and second terminals in response to a temperature gradient along the thermoelectric device resulting from operation of the power transistor.
Dependencies are inferred from the claim text.