Methods and structures for contacting shield conductor in a semiconductor device

A semiconductor device, comprising:

• a region of semiconductor material comprising a major surface and a first conductivity type;
• a shielded-gate trench structure comprising:
• an active trench extending from the first major surface into the region of semiconductor material and comprising a first side, a second side opposite to the first side, a lower portion, and an upper portion;
• a shield dielectric adjacent to a lower portion of the active trench;
• a shield electrode adjacent to the shield dielectric in the lower portion of the active trench;
• a gate dielectric adjacent to an upper portion of the active trench;
• a gate electrode adjacent to the gate dielectric in the upper portion of the active trench;
• and
• an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode;
• a body region of a second conductivity type opposite to the first conductive type in the region of semiconductor material extending from the major surface adjacent to the first side and the second side of the active trench;
• a source region of the first conductivity type in the body region adjacent to the first side and the second side of the active trench;
• a first conductive region within the active trench and extending through the gate electrode and the IPD and coupled to the shield electrode;
• and
• a second conductive region coupled to the source region, wherein:
• the first conductive region is electrically isolated from the gate electrode;
• and
• the gate electrode comprises a shape in a top view that is adjacent to at least one side of the first conductive region in the top view.

A method of forming a semiconductor device, comprising:

• providing a region of semiconductor material comprising a t major surface and a first conductivity type;
• providing a shielded-gate trench structure comprising:
• an active trench extending from the first major surface into the region of semiconductor material and comprising an upper portion and a lower portion;
• a shield dielectric adjacent to the lower portion of the active trench;
• a shield electrode adjacent to the shield dielectric in the lower portion of the active trench;
• a gate dielectric adjacent to the upper portion of the active trench;
• and
• a gate electrode adjacent to the gate dielectric in the upper portion of the active trench and electrically isolated from the shield electrode;
• providing a body region of a second conductivity type opposite to the first conductive type in the region of semiconductor material extending from the major surface adjacent to the shielded-gate trench structure;
• providing a source region of the first conductivity type in the body region adjacent to the shielded-gate trench structure;
• and
• a first conductive region extending through the gate electrode and coupled to the shield electrode, wherein:
• the first conductive region is electrically isolated from the gate electrode;
• and
• the gate electrode comprises a shape in a top view that is uninterrupted on at least one side by the first conductive region.