High electron mobility transistors having barrier liners and integration schemes
AssigneeGlobalFoundries U.S. Inc.
InventorsRAMSEY HAZBUN, ANTHONY STAMPER, ZHONG-XIANG HE, PERNELL DONGMO
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Abstract
A transistor structure is provided, the structure may be for a high electron mobility transistor (HEMT). The HEMT comprises a channel layer arranged over a substrate, the channel layer may have a top surface. A barrier layer may be arranged over the channel layer. A first opening may be in the barrier layer and extend partially into the channel layer. A first barrier liner may be arranged in the first opening and over the channel layer, the first barrier liner may have a bottom surface. The bottom surface of the first barrier liner may be lower than the top surface of the channel layer.
Claims20
A transistor structure comprising:
- a channel layer over a substrate, the channel layer having a top surface;
- a barrier layer over the channel layer;
- a first opening in the barrier layer, the first opening extending partially into the channel layer;
- and
- a first barrier liner in the first opening and over the channel layer, the first barrier liner having a bottom surface, wherein the bottom surface of the first barrier liner is lower than the top surface of the channel layer.
A transistor structure comprising:
- a channel layer over a substrate, the channel layer having a top surface;
- a barrier layer over the channel layer, the barrier layer having a top surface;
- a first gate opening in the barrier layer, the first gate opening extending partially into the channel layer;
- a first barrier liner arranged in the first gate opening and over the channel layer, the first barrier liner having side portions and a bottom surface, wherein the bottom surface of the first barrier liner is lower than the top surface of the channel layer;
- and
- a top surface of the side portions of the first barrier liner is approximately coplanar with the top surface of the barrier layer.
A method of fabricating a transistor structure, the method comprising:
- forming a channel layer over a substrate, the channel layer having a top surface;
- forming a barrier layer over the channel layer;
- forming a first opening in the barrier layer, the first opening extending partially into the channel layer;
- and
- forming a first barrier liner in the first opening and over the channel layer, the first barrier liner having a bottom surface, wherein the bottom surface of the first barrier liner is lower than the top surface of the channel layer.
Dependencies are inferred from the claim text.