Managing semiconductor layers for a bipolar-junction transistor in a photonic platform
AssigneeCiena Corporation
InventorAntoine Bois
Life of this patent
Estimating the term…
Abstract
An article of manufacture, having a semiconductor layer and a dielectric layer. The semiconductor layer comprising a first surface and a second surface. The dielectric layer located adjacent to the first surface of the semiconductor layer. One or more base portions of the semiconductor in direct contact with and extending from the dielectric layer. One or more collector portions of the semiconductor in direct contact with and extending from the dielectric layer. One or more emitter portions of the semiconductor in direct contact with and extending from the dielectric layer. The one or more collector portions are spaced apart from the one or more emitter portions by the one or more base portions.
Claims20
An article of manufacture, comprising:
- a semiconductor layer;
- a dielectric layer in contact with the semiconductor layer;
- one or more base portions of the semiconductor in direct contact with and extending from the dielectric layer;
- one or more collector portions of the semiconductor in direct contact with and extending from the dielectric layer;
- and
- one or more emitter portions of the semiconductor in direct contact with and extending from the dielectric layer;
- wherein the one or more collector portions are spaced apart from the one or more emitter portions by the one or more base portions.
A method comprising:
- etching and doping all or a portion of a semiconductor layer to form an emitter portion directly on a dielectric layer;
- and
- etching and doping all or a portion of the semiconductor layer to form a base portion directly on the dielectric layer;
- and
- etching and doping all or a portion of the semiconductor layer to form a collector portion directly on the dielectric layer, wherein the collector portion and the emitter portion are separated by the base portion;
- forming a first metal contact structure within a via pattern in the dielectric layer to form an emitter contact directly on the semiconductor;
- and
- forming a second metal contact structure within a via pattern in the dielectric layer to form a base contact directly on the semiconductor;
- and
- forming a third metal contact structure within a via pattern in the dielectric layer to form a collector contact directly on the semiconductor.
Dependencies are inferred from the claim text.