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US 2023/0155009 A1Published application
Tunnel field effect transistor devices
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Bahman Hekmatshoartabari, Ruilong Xie, ChoongHyun Lee
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Abstract
A semiconductor tunnel FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.
Claims20
A semiconductor nanosheet tunnel FET (field effect transistor) comprising
- a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region;
- wherein the first source/drain region comprises a p-type material;
- and
- wherein the second source/drain region comprises an n-type material.
1 more element
A method of fabricating a semiconductor device, the method comprising:
- forming a stack of nanosheet channels upon a substrate;
- forming a dummy gate structure adjacent to the nanosheet channels;
- forming an n-type source/drain region adjacent to one side of the dummy gate structure;
- and
- forming a p-type source/drain region adjacent to an opposing side of the dummy gate structure.
2 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a stack of nanosheet channels upon a substrate;
- forming a dummy gate structure adjacent to the nanosheet channels;
- forming a p-type source/drain region adjacent to one side of the dummy gate structure, the p-type source/drain region comprising a SiGe:B material;
- and
- forming an n-type source/drain region adjacent to an opposing side of the dummy gate structure, the n-type source/drain region comprising a Si:P material.
2 more elements
Dependencies are inferred from the claim text.