Fin profile modulation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Wei CHIANG
Life of this patent
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Abstract
Fins for use in gate all-around field effect transistors (GAAFETs) can be manufactured to have substantially uniform profiles, so the shapes of the fins are independent of size and pitch. Fin profile optimization from a tapered profile to a substantially uniform profile can be achieved via fin height control modulation using additional physical shaping operations to reduce pattern loading. These improvements in the fin profile can be accomplished by stacking and refilling a flowable chemical vapor deposition (FCVD) film multiple times and by using composition tuning during the FCVD process to further modulate fin profiles.
Claims20
A method, comprising:
- forming fins on a substrate;
- forming an insulating material between the fins;
- depositing an oxide over the insulating material to refill a space between the fins;
- exposing the fins to a first annealing process;
- planarizing the oxide;
- exposing the fins to a second annealing process;
- and
- recessing the fins to expose top portions of the fins.
A method comprising:
- forming, on an isolation region, fins with each fin having a base portion and a top portion narrower than the base portion;
- depositing a refill material to cover the base portions of the fins to form substantially uniform fins having substantially vertical sidewalls;
- curing the refill material;
- annealing the fins;
- and
- recessing a portion of the refill material to adjust a height of the fins.
A structure, comprising:
- a semiconductor substrate;
- an insulating material in the semiconductor substrate;
- and
- an array of fins extending out from a surface of the semiconductor substrate, wherein adjacent fins of the array of fins are separated by the insulating material,
- the insulating material between the fins covers a widest portion of each fin in the array of fins, and
- the array of fins has substantially equal fin widths and substantially equal fin heights.
Dependencies are inferred from the claim text.