Semiconductor Device and Method

A semiconductor device comprising:

• a channel region over a semiconductor substrate;
• a shallow trench isolation (STI) region over the semiconductor substrate adjacent the channel region;
• and
• a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the channel region, the dielectric fin structure having a top surface level with a top surface of the channel region, the dielectric fin structure comprising:
• a first liner layer in contact with the STI region;
• a first fill material over the first liner layer, the first fill material comprising a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material;
• a second liner layer over the first liner layer and the first fill material;
• and
• a second fill material over the second liner layer, wherein the second fill material comprises a seam-free material.

A method comprising:

• forming a semiconductor fin extending from a substrate;
• depositing an isolation material over the semiconductor fin and the substrate;
• depositing a dielectric liner over the isolation material;
• depositing a dielectric fill material over the dielectric liner, the dielectric fill material comprising a seam;
• and
• performing an implantation process on the dielectric fill material, wherein the implantation process removes the seam adjacent a top surface of the dielectric fill material.