Semiconductor device and method

A method comprising:

• forming a plurality of fins extending over a substrate;
• forming a plurality of epitaxial source/drain regions on the plurality of fins, wherein the plurality of epitaxial source/drain regions are merged together to form a merged epitaxial structure;
• forming a dielectric layer over the merged epitaxial structure;
• etching a first trench extending through the dielectric layer and through the merged epitaxial structure;
• depositing an insulating material into the first trench;
• and
• forming a gate structure extending over the plurality of fins.

A semiconductor device, comprising:

• a substrate;
• a first transistor device on the substrate, the first transistor device comprising:
• a first plurality of fins extending on the substrate, wherein adjacent fins of the first plurality of fins are respectively separated by a first distance;
• a first plurality of epitaxial source/drain regions on the first plurality of fins, wherein adjacent epitaxial source/drain regions of the first plurality of epitaxial source/drain regions are respectively merged together;
• and
• a first gate structure extending over the first plurality of fins;
• a second transistor device on the substrate adjacent the first transistor device, the second transistor device comprising:
• a second plurality of fins extending on the substrate, wherein adjacent fins of the second plurality of fins are respectively separated by the first distance, wherein a first fin of the first plurality of fins is separated from a second fin of the second plurality of fins by the first distance;
• a second plurality of epitaxial source/drain regions on the second plurality of fins, wherein adjacent epitaxial source/drain regions of the second plurality of epitaxial source/drain regions are respectively merged together;
• and
• a second gate structure extending over the second plurality of fins;
• and
• an isolation region between a first epitaxial source/drain region of the first plurality of epitaxial source/drain regions and a second epitaxial source/drain region of the second plurality of epitaxial source/drain regions, wherein the isolation region physically contacts the first epitaxial source/drain region and the second epitaxial source/drain region, wherein the isolation region comprises a first insulating material.