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US 2023/0155002 A1Published application
Metal gate fin electrode structure and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Hang Chiu, Wei-Cheng Wang, Chung-Chiang Wu, Chi On Chui
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Abstract
Embodiments provide a replacement metal gate in a FinFET or nanoFET which utilizes a conductive metal fill. The conductive metal fill has an upper surface which has a fin shape which may be used for a self-aligned contact.
Claims20
A method comprising:
- forming a fin over a substrate;
- forming a dummy gate structure over the fin;
- forming a source/drain region on either side of the dummy gate structure;
- depositing a first interlayer dielectric (ILD) over the source/drain region;
- recessing the first ILD and forming a self-align mask over the first ILD;
- performing a gate replacement cycle to replace the dummy gate structure with a replacement metal gate, the gate replacement cycle comprising:
- removing the dummy gate structure to form a first recess;
- depositing a gate dielectric in the first recess,
- forming a metal gate over the gate dielectric,
- deposing a metal fill over the metal gate, and
- etching back the gate dielectric, the metal gate, and the metal fill, to form an electrode fin from the metal fill;
- and
- forming a gate contact contacting a sidewall of the electrode fin.
10 more elements
A method comprising:
- patterning a semiconductor substrate to form a semiconductor fin;
- forming a dummy gate structure over the semiconductor fin;
- recessing the semiconductor fin on a first side of the dummy gate structure to form a first recess;
- depositing a source/drain region in the first recess;
- depositing a first interlayer dielectric (ILD) over the source/drain region;
- removing the dummy gate structure to form a second recess in the first ILD, the second recess exposing a channel region of the semiconductor fin;
- depositing a gate dielectric in the second recess over the channel region;
- depositing work function layers in the second recess over the gate dielectric;
- depositing a metal fill over the work function layers;
- etching back the gate dielectric and the work function layers to form a third recess in the first ILD, a portion of the metal fill remaining in the third recess as a fin electrode;
- and
- forming a self-aligned contact in the third recess, the self-aligned contact interfacing with vertical portions of the fin electrode.
9 more elements
A structure comprising:
- a first nanostructure;
- a second nanostructure disposed over the first nanostructure, the second nanostructure separated from the first nanostructure by a first inner spacer at one end of the first nanostructure and by a second inner spacer at an opposite end of the first nanostructure;
- a first source/drain region disposed adjacent the first inner spacer, the first source/drain contacting the first nanostructure and the second nanostructure;
- gate structure disposed adjacent the first inner spacer opposite the first source/drain region, the gate structure wrapping around the first nanostructure and the second nanostructure, the gate structure extending vertically higher than the source/drain region, the gate structure comprising a first dielectric layer, a metal gate, and a gate fill, the gate fill having a fin portion protruding from the metal gate;
- and
- a gate contact disposed on either side of the fin portion, a portion of the gate contact interposed between the fin portion and the first dielectric layer.
3 more elements
Dependencies are inferred from the claim text.