Silicon carbide semiconductor device and method for manufacturing the same

A silicon carbide semiconductor device comprising:

• a silicon carbide semiconductor layer including a portion made of a silicon carbide single crystal and having a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane, the silicon carbide semiconductor layer further including a modified layer, the modified layer forming a part of the side surface located close to the rear surface and having an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal;
• and
• a side silicide layer including a metal silicide that is a compound of a metal element and silicon, the side silicide layer disposed on the side surface of the silicon carbide semiconductor layer, being adjacent to a side of the modified layer that is close to the rear surface, and facing and being in contact with the portion of the silicon carbide semiconductor layer made of the silicon carbide single crystal in a direction parallel to the main surface.