Semiconductor device having hybrid channel structure
AssigneeSamsung Electronics Co., Ltd.
InventorsKang-ill Seo, Sooyoung Park, Byounghak Hong
Life of this patent
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Abstract
A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one 1st channel structure extended in 1st and 2nd directions in parallel with an upper surface of the substrate without directly contacting the substrate, and a 2nd channel structure connected to and intersecting the at least one 1st channel structure in a 3rd direction perpendicular to the 1st or 2nd direction; a gate structure surrounding the hybrid channel structure; and source/drain regions respectively formed at two opposite ends of the at least one hybrid channel structure in the 1st direction.
Claims26
A semiconductor device comprising:
- a substrate;
- at least one hybrid channel structure formed on the substrate, and comprising:
- at least one 1st channel structure extended in 1st and 2nd directions on the substrate;
- and
- a 2nd channel structure connected to and intersecting the at least one 1st channel structure;
- a gate structure surrounding the at least one hybrid channel structure;
- and
- source/drain regions respectively formed at two opposite ends of the at least one hybrid channel structure in the 1st direction.
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A semiconductor device comprising:
- a substrate;
- a plurality of 1st nanosheet layers formed above the substrate, and extended in 1st and 2nd directions perpendicular to each other;
- a 1st fin structure formed above the substrate, extended in the 1st direction, and connecting at least two of the 1st nanosheet layers in a 3rd direction perpendicular to the 1st or 2nd direction, a width of the 1st fin structure being smaller than a width of each of the 1st nanosheet layers in the 2nd direction;
- a gate structure surrounding the 1st nanosheet layers and the 1st fin structure;
- and
- 1st source/drain regions respectively formed at two opposite ends of each of the 1st nanosheet layers in the 1st direction,
- wherein two opposite ends of the 1st fin structure in the 1st direction are respectively connected to the 1st source/drain regions.
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A method of manufacturing a semiconductor device, the method comprising:
- providing a nanosheet stack comprising a plurality nanosheet layers stacked on a substrate;
- forming at least one opening exposing upward a lowermost nanosheet layer among the nanosheet layers;
- forming at least one fin structure, in the at least one opening, which connects the lowermost nanosheet layer and an uppermost nanosheet layer among the nanosheet layers;
- patterning at least one channel stack comprising a section of the nanosheet layers in a channel width direction and the at least one fin structure;
- forming source/drain regions on two opposite ends of the at least one channel stack in a channel length direction;
- and
- forming a gate structure on the at least one channel stack.
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Dependencies are inferred from the claim text.