Short gate on active and longer gate on sti for nanosheets

A method for forming a nanosheet device, the method comprising:

• forming nanosheets stacks over a substrate, the nanosheet stacks separated by shallow trench isolation (STI) regions;
• forming a first hardmask material over the nanosheet stacks;
• depositing a first sacrificial material;
• removing the first hardmask material such that first recesses are defined over the nanosheet stacks;
• depositing a second sacrificial material in the first recesses defined over the nanosheet stacks;
• forming a second hardmask material over the second sacrificial material;
• recessing the first sacrificial material such that second recesses are defined adjacent the second hardmask material;
• forming a third hardmask material within the second recesses;
• defining a uniform gate length in both the second and third hardmask materials;
• and
• selectively trimming the second hardmask material such that a gate length over the nanosheet stacks is less than a gate length over the STI regions.