Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung TSAI, Chih-Hsin KO, Clement Hsing Jen WANN, Ya-Yun CHENG
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Abstract
A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.
Claims20
A semiconductor device including a FET, comprising:
- an isolation insulating layer disposed in a trench of a substrate;
- a gate dielectric layer disposed over a channel region of the substrate;
- a gate electrode disposed over the gate dielectric layer;
- a source and a drain disposed adjacent to the channel region;
- and
- an air spacer formed in a space below the source,
- wherein an impurity containing region containing an impurity in an amount higher than the substrate is disposed between the space and the substrate.
A semiconductor device including a FET, comprising:
- an isolation insulating layer disposed in a trench of a substrate and surrounding an active region;
- gate structures disposed over the active region;
- source/drain regions disposed adjacent to the gate structures in plan view;
- and
- air spacers formed in spaces below the source/drain regions, respectively, wherein:
- an isolation structure is disposed between adjacent gate structures,
- the isolation structure incudes a vertical portion and horizontal portions laterally extending from the vertical portion, and
- the air spacers are disposed in the horizontal portions.
A semiconductor device including a FET, comprising:
- an isolation insulating layer disposed in a trench of the substrate;
- a gate dielectric layer disposed over a channel region of the substrate;
- a gate electrode disposed over the gate dielectric layer;
- a source and a drain disposed adjacent to the channel region;
- and
- an air spacer formed in a space below the source,
- wherein an impurity containing region containing an impurity in an amount higher than the substrate is disposed between the air spacer and the substrate, and
- the air spacer is disposed between the source or the drain and the impurity containing region.
Dependencies are inferred from the claim text.