Semiconductor device
AssigneeInfineon Technologies AG
InventorsCarsten SCHAEFFER, Patrick HANEKAMP, Oliver HUMBEL, Angelika KOPROWSKI, Wolfgang LEHNERT, Francisco Javier SANTOS RODRIGUEZ
Life of this patent
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Abstract
A semiconductor device and a method of forming a semiconductor device are provided. In an embodiment, the semiconductor device comprises a device region, an edge termination region surrounding the device region, a first metal feature in the edge termination region, a first conformal ion diffusion barrier layer over the first metal feature, and a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.
Claims26
A semiconductor device, comprising:
- a device region;
- an edge termination region surrounding the device region;
- a first metal feature in the edge termination region;
- a first conformal ion diffusion barrier layer over the first metal feature;
- and
- a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.
A semiconductor device, comprising:
- a device region;
- an edge termination region adjacent the device region;
- a first metal feature in the edge termination region;
- a first atomic layer deposition layer having a first material composition over the first metal feature;
- and
- a second atomic layer deposition layer having a second material composition different than the first material composition over the first atomic layer deposition layer.
A method for forming a semiconductor device, comprising:
- forming a first conformal layer having a first material composition and a first thickness less than 200 nm over a first metal feature formed in an edge termination region of the semiconductor device;
- forming a second conformal layer having a second material composition different than the first material composition and a second thickness less than 200 nm over the first conformal layer;
- and
- forming a conformal dielectric layer over the second conformal layer.
Dependencies are inferred from the claim text.