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US 2023/0154970 A1Published application
Monolithic Segmented LED Array Architecture With Islanded Epitaxial Growth
AssigneeLumileds LLC
InventorsAshish Tandon, Rajat Sharma, Joseph Flemish, Andrei Papou, Wen Yu, Erik William Young, Yu-Chen Shen, Luke Gordon
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Abstract
A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.
Claims20
A light emitting diode device comprising:
- a first semiconductor layer, an active region on the first semiconductor layer, and a second semiconductor layer on the active region;
- a trench extending from a first surface of the second semiconducting layer, through the active layer, and at least partially through the first semiconductor layer that electrically isolates a plurality of light emitting regions;
- a first metal contact extending from the first surface of the second semiconductor layer to the first semiconductor layer and electrically connecting to a sidewall of the first semiconductor layer;
- a second metal contact to the second semiconductor layer;
- a passivation layer that isolates the first metal contact from the second semiconductor layer, the active region, and the second metal contact;
- and
- a wavelength converting layer on the second surface of the first semiconductor layer.
4 more elements
An LED array comprising:
- a plurality of pixels, each pixel separated from an adjacent pixel by a trench extending from a substrate to a distal surface of an n-type semiconductor layer;
- an n-type contact in the trench;
- the n-type semiconductor layer disposed on an active layer on a p-type semiconductor layer;
- a wavelength converting layer on the n-type semiconductor layer on a surface opposite the active layer;
- a p-type contact on the p-type semiconductor layer;
- and
- one or more passivation layer extending from the substrate to the n-type semiconductor layer and separating the n-type contact from the active layer and the p-type layer, the one or more passivation layer extending at least partially on a sidewall of the n-type semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.