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US 2023/0154965 A1Published application
Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Group Corporation
InventorTakekazu Shinohara
Life of this patent
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Abstract
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
Claims19
1-18. (canceled)
A light detecting device, comprising:
- a semiconductor substrate including a first plane that receives incident light and a second plane opposite to the first plane;
- first to fourth photoelectric conversion regions disposed in the semiconductor substrate,
- wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region, the third photoelectric conversion region, and the fourth photoelectric conversion region in a plan view;
- a separation region disposed in the semiconductor substrate, wherein the separation region includes first to fourth parts, wherein the first part of the separation region is disposed between the first and second photoelectric conversion regions in the plan view, and wherein the second part of the separation region is disposed between the second and third photoelectric conversion regions in the plan view,
- wherein the third part of the separation region is disposed between the third and fourth photoelectric conversion regions in the plan view, and wherein the fourth part of the separation region is disposed between the first and fourth photoelectric conversion regions in the plan view;
- a floating diffusion region shared by the first to fourth photoelectric conversion regions, wherein the floating diffusion region is disposed between the first part of the separation region and the third part of the separation region in the plan view, and wherein the floating diffusion region is disposed between the second part of the separation region and the fourth part of the separation region in the plan view;
- and
- a multi-wiring layer disposed on the second plane of the semiconductor substrate.
5 more elements
An electronic device, comprising:
- a light detecting device, comprising:
- a semiconductor substrate including a first plane that receives incident light and a second plane opposite to the first plane;
- first to fourth photoelectric conversion regions disposed in the semiconductor substrate,
- wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region, the third photoelectric conversion region, and the fourth photoelectric conversion region in a plan view;
- a separation region disposed in the semiconductor substrate, wherein the separation region includes first to fourth parts, wherein the first part of the separation region is disposed between the first and second photoelectric conversion regions in the plan view, and wherein the second part of the separation region is disposed between the second and third photoelectric conversion regions in the plan view,
- wherein the third part of the separation region is disposed between the third and fourth photoelectric conversion regions in the plan view, and wherein the fourth part of the separation region is disposed between the first and fourth photoelectric conversion regions in the plan view;
- a floating diffusion region shared by the first to fourth photoelectric conversion regions, wherein the floating diffusion region is disposed between the first part of the separation region and the third part of the separation region in the plan view, and wherein the floating diffusion region is disposed between the second part of the separation region and the fourth part of the separation region in the plan view;
- and
- a multi-wiring layer disposed on the second plane of the semiconductor substrate.
6 more elements
Dependencies are inferred from the claim text.