Solid-state imaging element and electronic apparatus

A light detecting device, comprising:

• a photoelectric conversion section formed in a semiconductor substrate and generating charges corresponding to a quantity of received light;
• a charge accumulating section accumulating the charges generated by the photoelectric conversion section;
• and
• a transfer gate transferring the charges generated by the photoelectric conversion section to the charge accumulating section,
• wherein a first surface of the semiconductor substrate is a light incident surface and a second surface of the semiconductor substrate is opposite to the first surface of the semiconductor substrate,
• wherein the transfer gate comprises a plurality of vertical gate electrodes disposed in the semiconductor substrate and a plurality of transfer gate electrodes disposed on the plurality of vertical gate electrodes,
• wherein the second surface of the semiconductor substrate is between the plurality of vertical gate electrodes and the plurality of transfer gate electrodes,
• wherein each transfer gate electrode in the plurality of transfer gate electrodes is independent of each other so as to correspond to each vertical gate electrode in the plurality of vertical gate electrodes, respectively, and
• wherein at least a part of a diameter of at least one of the plurality of vertical gate electrodes is different in a depth direction of the semiconductor substrate.

An electronic apparatus, comprising:

• a light detecting device, comprising:
• a photoelectric conversion section formed in a semiconductor substrate and generating charges corresponding to a quantity of received light;
• a charge accumulating section accumulating the charges generated by the photoelectric conversion section;
• and
• a transfer gate transferring the charges generated by the photoelectric conversion section to the charge accumulating section,
• wherein a first surface of the semiconductor substrate is a light incident surface and a second surface of the semiconductor substrate is opposite to the first surface of the semiconductor substrate,
• wherein the transfer gate comprises a plurality of vertical gate electrodes disposed in the semiconductor substrate and a plurality of transfer gate electrodes disposed on the plurality of vertical gate electrodes,
• wherein the second surface of the semiconductor substrate is between the plurality of vertical gate electrodes and the plurality of transfer gate electrodes,
• wherein each transfer gate electrode in the plurality of transfer gate electrodes is independent of each other so as to correspond to each vertical gate electrode in the plurality of vertical gate electrodes, respectively, and
• wherein at least a part of a diameter of at least one of the plurality of vertical gate electrodes is different in a depth direction of the semiconductor substrate;
• and
• a signal processing circuit processing an output signal from the light detecting device.