Light receiving device, method for manufacturing same, and distance measuring device

A method for manufacturing a light receiving device including a pixel including:

• an embedded photodiode having a charge storage layer of a second conductivity type different from a first conductivity type of a photoelectric conversion region in a region in a vicinity of a second surface on an opposite side to a first surface that is a light incident surface of a substrate;
• at least two transfer transistors that transfer a charge stored in the photodiode;
• and
• at least one discharge transistor that discharges a charge stored in the photodiode,
• the method comprising:
• forming the charge storage layer of the second conductivity type of the light receiving device by self-alignment by using, as a mask, gates and sidewalls of the transfer transistors, or gates and sidewalls of the transfer transistors and the discharge transistors.

A distance measuring device comprising:

• a predetermined light source;
• and
• a light receiving device that receives reflected light obtained by irradiation light being applied from the predetermined light source, being reflected by an object, and returning,
• wherein the light receiving device includes a pixel including:
• an embedded photodiode having a charge storage layer of a second conductivity type different from a first conductivity type of a photoelectric conversion region in a region in a vicinity of a second surface on an opposite side to a first surface that is a light incident surface of a substrate;
• at least two transfer transistors that transfer a charge stored in the photodiode;
• and
• at least one discharge transistor that discharges a charge stored in the photodiode, and
• the charge storage layer of the second conductivity type is placed to be, in a planar view, surrounded by gates and sidewalls of the transfer transistors, or gates and sidewalls of the transfer transistors and the discharge transistors.