Semiconductor structure and manufacturing method therefor

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate on which a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer are sequentially formed, wherein the first conductive type is one of a N-type and a P-type and the second conductive type is the other of the N-type and the P-type;
• removing the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in first predetermined regions to form grooves and retaining the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in second predetermined regions and third predetermined regions, wherein the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in the second predetermined regions form light emitting units arranged in an array, and the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in the third predetermined regions form connection posts, each of which connects adjacent light emitting units of the light emitting units;
• a width, in a lateral direction of the array, of each of the third predetermined regions is smaller than a width, in the lateral direction of the array, of each of the second predetermined regions;
• and a width, in a longitudinal direction of the array, of each of the third predetermined regions is smaller than a width, in the longitudinal direction of the array, of each of the second predetermined regions;
• and
• removing the substrate by wet etching from the grooves wherein an etching solution used in the wet etching removes the substrate at a greater rate in a horizontal plane direction than in a thickness direction.