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US 2023/0154890 A1Published application
Dicing method
AssigneeCanon Kabushiki Kaisha
InventorsTetsuro Yasukawa, Takeshi Shibata
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Abstract
A dicing method including the steps of: bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the wafer first resistivity, thereby forming a bonded wafer; irradiating the bonded wafer with a laser while varying focal lengths in a thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line; and dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.
Claims8
A dicing method comprising the steps of:
- bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the first wafer resistivity, thereby forming a bonded wafer having regions varying in resistivity in a thickness direction;
- irradiating the bonded wafer with a laser while varying focal lengths in the thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line;
- and
- dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.
1 more element
Dependencies are inferred from the claim text.