Semiconductor devices including a thick metal layer and a bump

A semiconductor device comprising:

• a substrate;
• a lower insulating layer on the substrate;
• a lower interconnection member in the lower insulating layer;
• a pad on the lower insulating layer;
• an upper interconnection member on the lower insulating layer;
• a gap region between the pad and the upper interconnection member;
• a protective insulating layer on a surface of each of the lower insulating layer, the pad, and the upper interconnection member;
• and
• a bump arranged on the protective insulating layer and electrically connected to the pad,
• wherein a thickness of the pad in a first direction that is perpendicular to a top surface of the substrate is greater than a thickness of the lower interconnection member in the first direction,
• a width of the gap region in a second direction that is perpendicular to the first direction is greater than or equal to the thickness of the pad in the first direction,
• an upper surface of the protective insulating layer includes a concave portion that is recessed between the pad and the upper interconnection member, and
• a lower surface of the bump includes a convex portion protruding into the concave portion of the protective insulating layer.

A semiconductor device comprising:

• a substrate;
• a lower insulating layer on the substrate;
• a lower interconnection member in the lower insulating layer;
• a pad on a top surface of the lower insulating layer;
• an upper interconnection member on the top surface of the lower insulating layer, and spaced apart from the pad;
• a protective insulating layer covering the lower insulating layer, the pad and the upper interconnection member, and including an opening exposing a portion of the pad and a recess between the pad and the upper interconnection member;
• a pillar structure arranged on the protective insulating layer and electrically connected to the pad;
• and
• a solder on the pillar structure,
• wherein a thickness of the pad in a first direction that is perpendicular to a top surface of the substrate is greater than a thickness of the lower interconnection member in the first direction,
• a distance between the pad and the upper interconnection member in a second direction that is perpendicular to the first direction is greater than or equal to the thickness of the pad in the first direction,
• wherein a lower surface of the pillar structure includes a first convex portion in the opening of the protective insulating layer, and a second convex portion in the recess of the protective insulating layer, and
• an upper surface of the pillar structure includes a first concave portion overlapping the first convex portion in the first direction, and a second concave portion overlapping the second convex portion in the first direction.