Semiconductor structure and method for manufacturing preparing same
AssigneeChangxin Memory Technologies, Inc.
InventorSungjin KIM
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Abstract
A semiconductor structure includes a base layer, a device layer, and a stress propagating layer. The device layer is located on the base layer. The device layer includes a first dielectric layer and device structures. The first dielectric layer fills the device layer and isolates the device structures. The stress propagating layer is located on the device layer, includes a second dielectric layer and a plurality of stress propagating patterns arranged at intervals. The second dielectric layer fills the stress propagating layer and isolates the stress propagating patterns.
Claims15
A semiconductor structure comprising:
- a base layer;
- a device layer located on the base layer, wherein the device layer comprises a first dielectric layer and device structures, and the first dielectric layer fills the device layer and isolates the device structures;
- and
- a stress propagating layer located on the device layer, wherein the stress propagating layer comprises a second dielectric layer and a plurality of stress propagating patterns arranged at intervals, and the second dielectric layer fills the stress propagating layer and isolates the stress propagating patterns.
A method for manufacturing a semiconductor structure, comprising:
- providing a base layer;
- forming a device layer on the base layer, wherein the device layer comprises a first dielectric layer and device structures, and the first dielectric layer fills the device layer and isolates the device structures;
- and
- forming a stress propagating layer on the device layer, wherein the stress propagating layer comprises a second dielectric layer and a plurality of stress propagating patterns arranged at intervals, and the second dielectric layer fills the stress propagating layer and isolates the stress propagating patterns.
Dependencies are inferred from the claim text.