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US 2023/0154853 A1Published application
Semiconductor structure and semiconductor device
AssigneeChangxin Memory Technologies, Inc.
InventorYulei WU
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Abstract
The present disclosure provides a semiconductor structure and a semiconductor device. The semiconductor structure includes a first conductive layer, a first barrier layer, and an insulating layer. The first conductive layer includes at least two traces, and a recess is formed between two adjacent ones of the traces. The first barrier layer is provided on a sidewall of the recess. The insulating layer fills the recess, and an air gap is formed in the insulating layer located in the recess.
Claims15
A semiconductor structure, comprising:
- a first conductive layer comprising at least two first traces, wherein a recess is formed between two adjacent ones of the first traces;
- a first barrier layer provided on a sidewall of the recess;
- and
- an insulating layer filling the recess, wherein an air gap is formed in the insulating layer located in the recess.
1 more element
Dependencies are inferred from the claim text.