Forming Dielectric Film With High Resistance to Tilting

A structure comprising:

• a substrate;
• a first conductive feature over the substrate;
• a first etch stop layer over the first conductive feature;
• a dielectric layer over the first etch stop layer, wherein the dielectric layer comprises nitrogen therein, wherein the dielectric layer comprises a high-k dielectric material;
• a second conductive feature in the dielectric layer and the first etch stop layer, wherein the second conductive feature is over and contacting the first conductive feature;
• an air spacer encircling the second conductive feature, wherein sidewalls of the second conductive feature are exposed to the air spacer;
• and
• a second etch stop layer over and contacting the dielectric layer, wherein the second etch stop layer is further over the second conductive feature.

A structure comprising:

• a first conductive feature;
• a second conductive feature over and electrically coupling to the first conductive feature, wherein the second conductive feature comprises:
• a diffusion barrier;
• and
• a metallic material in a basin formed by the diffusion barrier;
• an air spacer encircling a top portion of the second conductive feature;
• and
• a dielectric layer encircling the air spacer, wherein the dielectric layer comprises a high-k dielectric material that comprises nitrogen.