Semiconductor structure
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsHaiyang ZHANG, Panpan LIU
Life of this patent
Estimating the term…
Abstract
A semiconductor structure is provided in the present disclosure. The semiconductor structure includes a substrate, a plurality of fins on the substrate, a plurality of isolation structures on the substrate, each formed on a top surface of the substrate between adjacent fins, and a power rail formed in at least one isolation structure of the plurality of isolation structures and further in the substrate, where a top surface of the power rail is lower than a top surface of the plurality of fins.
Claims9
A semiconductor structure, comprising:
- a substrate;
- a plurality of fins, formed on the substrate;
- a plurality of isolation structures, each formed on a top surface of the substrate between adjacent fins;
- and
- a power rail, formed in at least one isolation structure of the plurality of isolation structures and further in the substrate, wherein a top surface of the power rail is lower than a top surface of the plurality of fins.
Dependencies are inferred from the claim text.