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US 2023/0154847 A1Published application
Advanced structures having mosfet transistors and metal layers
OwnerFu-Chang Hsuinventor
Life of this patent
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Abstract
Advanced structures having MOSFET transistors and metal layers are disclosed. In one embodiment, a transistor structure is provided that includes a first transistor layer, a second transistor layer located under the first transistor layer, a first power bus layer located above the first transistor layer, a second power bus layer located under the second transistor layer, and a first interconnect layer located above the first power bus layer.
Claims20
A transistor structure, comprising:
- a first transistor layer;
- a second transistor layer located under the first transistor layer;
- a first power bus layer located above the first transistor layer;
- a second power bus layer located under the second transistor layer;
- and
- a first interconnect layer located above the first power bus layer.
3 more elements
A transistor structure, comprising:
- a first transistor layer;
- a second transistor layer located below the first transistor layer;
- first and second power bus layers located between the first and second transistor layers;
- a first interconnect layer located above the first transistor layer;
- and
- a second interconnect layer located under the second transistor layer.
3 more elements
A process for forming a transistor structure, comprising:
- forming a transistor layer above a substrate;
- forming a first power bus layer above of the transistor layer;
- forming a first interconnection layer above the first power bus layer;
- rotating the transistor structure 180 degrees so that the substrate is on top of the transistor structure;
- removing the substrate to expose the transistor layer;
- forming a second power bus layer above the transistor layer;
- and
- forming a second interconnect layer above the second power bus layer.
5 more elements
Dependencies are inferred from the claim text.