Interconnect Structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Li Wang, Yasutoshi Okuno
Life of this patent
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Abstract
Embodiments described herein relate generally to one or more methods for forming an interconnect structure, such as a dual damascene interconnect structure comprising a conductive line and a conductive via, and structures formed thereby. In some embodiments, an interconnect opening is formed through one or more dielectric layers over a semiconductor substrate. The interconnect opening has a via opening and a trench over the via opening. A conductive via is formed in the via opening. A nucleation enhancement treatment is performed on one or more exposed dielectric surfaces of the trench. A conductive line is formed in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.
Claims20
A method comprising:
- etching an interconnect opening through an inter-metal dielectric, the interconnect opening having a via opening and a trench over the via opening;
- forming a conductive via in the via opening by selectively depositing a metal in the via opening;
- after forming the conductive via, increasing a number of nucleation sites on exposed metal surfaces of the conductive via and exposed dielectric surfaces of the trench;
- and
- forming a conductive line in the trench by adsorbing a conductive fill material on the nucleation sites of the exposed metal surfaces of the conductive via and the exposed dielectric surfaces of the trench.
A structure comprising:
- a dielectric layer over a semiconductor substrate;
- and
- an interconnect structure disposed in the dielectric layer, the interconnect structure comprising:
- a conductive via comprising a metal;
- and
- a conductive line over the conductive via, the conductive line comprising a conductive fill material, the metal of the conductive via being different from the conductive fill material of the conductive line, wherein no seed layer or metal-containing barrier layer is disposed between the metal of the conductive via and the conductive fill material of the conductive line.
A structure comprising:
- a conductive feature over a semiconductor substrate;
- an inter-metal dielectric over the conductive feature;
- an interconnect in the inter-metal dielectric, the interconnect comprising:
- a conductive via contacting the conductive feature, the conductive via comprising a metal;
- and
- a conductive line contacting the conductive via, the conductive line comprising a conductive fill material, the metal of the conductive via being different from the conductive fill material of the conductive line, the metal of the conductive via extending continuously between the conductive feature and the conductive fill material of the conductive line.
Dependencies are inferred from the claim text.