Semiconductor structure and forming method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorYonghui ZHANG
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Abstract
The present disclosure provides a semiconductor structure and a forming method thereof. The semiconductor structure includes: a substrate, including a first side and a second side opposite to each other; a dielectric layer, provided at the first side of the substrate; a first through silicon via (TSV) structure, extending from a top surface of the dielectric layer to the first side of the substrate; and a second TSV structure, extending from the second side of the substrate to the first side of the substrate, coming into contact with the first TSV structure at the first side of the substrate, and having a preset opening width.
Claims15
A semiconductor structure, comprising:
- a substrate, comprising a first side and a second side opposite to each other;
- a dielectric layer, provided at the first side of the substrate;
- a first through silicon via (TSV) structure, extending from a top surface of the dielectric layer to the first side of the substrate;
- and
- a second TSV structure, extending from the second side of the substrate to the first side of the substrate, coming into contact with the first TSV structure at the first side of the substrate, and having a preset opening width.
A forming method of a semiconductor structure, comprising:
- providing a substrate and a dielectric layer disposed on the substrate, the substrate comprising a first side and a second side, and the dielectric layer being provided at the first side of the substrate;
- forming a first through silicon via (TSV) structure, the first TSV structure extending from a top surface of the dielectric layer to the first side of the substrate;
- and
- forming a second TSV structure, the second TSV structure extending from the second side of the substrate to the first side of the substrate, coming into contact with the first TSV structure at the first side of the substrate, and having a preset opening width.
Dependencies are inferred from the claim text.