Method for manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Cheng CHOU, Shiu-Ko JANGJIAN, Cheng-Ta WU
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Abstract
A method includes forming patterned masks over a semiconductor substrate; etching the semiconductor substrate using the patterned masks as an etch mask to form semiconductor fins with a trench between the semiconductor fins; performing an annealing process using a hydrogen containing gas to smooth surfaces of the semiconductor fins; after performing the annealing process, selectively forming a first liner on the smoothed surfaces of the semiconductor fins, while leaving surfaces of the patterned masks exposed by the first liner; filling the trench with a dielectric material; and etching back the first liner and the dielectric material to form an isolation structure between the semiconductor fins.
Claims20
A method, comprising:
- forming patterned masks over a semiconductor substrate;
- etching the semiconductor substrate using the patterned masks as an etch mask to form semiconductor fins with a trench between the semiconductor fins;
- performing an annealing process using a hydrogen containing gas to smooth surfaces of the semiconductor fins;
- after performing the annealing process, selectively forming a first liner on the smoothed surfaces of the semiconductor fins, while leaving surfaces of the patterned masks exposed by the first liner;
- filling the trench with a dielectric material;
- and
- etching back the first liner and the dielectric material to form an isolation structure between the semiconductor fins.
A method, comprising:
- forming patterned masks over a semiconductor substrate;
- etching the semiconductor substrate using the patterned masks as an etch mask to form semiconductor fins with a trench between the semiconductor fins;
- forming a first liner on exposed surfaces of the semiconductor fins and the semiconductor substrate;
- forming a second liner over the first liner, wherein surfaces of the patterned masks are exposed by the first and second liners;
- filling the trench with a dielectric material;
- and
- etching back the first liner, the second liner, and the dielectric material to form an isolation structure between the semiconductor fins.
A method, comprising:
- forming patterned masks over a semiconductor substrate;
- etching the semiconductor substrate using the patterned masks as an etch mask to form semiconductor fins with a trench between the semiconductor fins;
- forming a first liner on exposed surfaces of the semiconductor fins and the semiconductor substrate;
- after forming the first liner, performing a first annealing process in an oxygen-free environment;
- after performing the first annealing process, forming a second liner over the first liner;
- filling the trench with a dielectric material;
- and
- etching back the first liner, the second liner, and the dielectric material to form an isolation structure between the semiconductor fins.
Dependencies are inferred from the claim text.