Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, comprising:

• forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate, the light blocking film having a first width;
• forming a photosensitive adhesive layer curable by the first light on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film;
• bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer;
• partially curing the photosensitive adhesive layer by irradiating the first light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured and adheres to the product substrate;
• processing the product substrate to form a plurality of semiconductor devices, after the partially curing of the photosensitive adhesive layer, wherein the product substrate has a dummy region surrounding the plurality of semiconductor devices, the dummy region having a second width that is equal to or wider than the first width;
• and
• cutting the plurality of semiconductor devices together with the product substrate, wherein the portion of the photosensitive adhesive layer overlapping the light blocking film is removed by the cutting.

A method of manufacturing a semiconductor device, comprising:

• forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate;
• forming a photosensitive adhesive layer on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film;
• bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer;
• partially curing the photosensitive adhesive layer by irradiating the first light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured, but adheres to the product substrate;
• processing the product substrate to form a plurality of semiconductor devices, after the partially curing of the photosensitive adhesive layer;
• attaching adhesive tape to an upper surface of the product substrate on which the plurality of semiconductor devices are formed;
• curing the portion of the photosensitive adhesive layer overlapping the light blocking film by irradiating second light having a second wavelength that is outside the first wavelength band through the light blocking film;
• and
• detaching the product substrate from the light-transmitting carrier substrate.