Semiconductor device structure with protection cap

A semiconductor device structure, comprising:

• a conductive line over a substrate, wherein the conductive line has a main portion and an end portion, the end portion is connected to the main portion, and a line width of the end portion decreases toward the main portion;
• a protection cap over the end portion, wherein the protection cap and the conductive line are made of different conductive materials;
• a first photosensitive dielectric layer over the substrate, the conductive line, and the protection cap;
• and
• a conductive via structure passing through the first photosensitive dielectric layer and connected to the protection cap, wherein the protection cap has a top end and a bottom end, the top end is in contact with the conductive via structure, the bottom end is in contact with the end portion of the conductive line, and a first average width of the top end is substantially equal to a second average width of the bottom end.

A semiconductor device structure, comprising:

• a first conductive line over a substrate, wherein the first conductive line has a main portion and a rounded end portion, and the rounded end portion is connected to the main portion;
• a first protection cap over the rounded end portion, wherein the first protection cap and the first conductive line are made of different conductive materials;
• a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap;
• and
• a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap, wherein the first photosensitive dielectric layer is in contact with a first sidewall of the first protection cap, a second sidewall of the rounded end portion, and a third sidewall of the conductive via structure, and the first sidewall is between the second sidewall and the third sidewall.