Semiconductor structure and method for manufacturing same
AssigneeChangxin Memory Technologies, Inc.
InventorsSongmei Shen, Junyi Zhang
Life of this patent
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AssigneeChangxin Memory Technologies, Inc.
InventorsSongmei Shen, Junyi Zhang
Estimating the term…
A method for manufacturing a semiconductor structure includes the following operations. A support layer and a first dielectric layer that are stacked are formed on the substrate, in which first trenches are formed in the support layer and the first dielectric layer. A first blocking layer covering sidewalls and bottoms of the first trenches and a top surface of the first dielectric layer is formed. The first blocking layer and the first dielectric layer are etched to form etching holes. The first dielectric layer exposed by the etching holes is removed to form cavities. A second blocking layer is formed, which seals the etching holes at the tops of the cavity. Part of the first blocking layer in the first trenches is removed so that the first trenches expose the substrate. Wires are formed in the first trenches.
A method for manufacturing a semiconductor structure, comprising:
A semiconductor structure comprising:
Dependencies are inferred from the claim text.