Dry etching method, method for manufacturing semiconductor element, and cleaning method
AssigneeShowa Denko K.K.
InventorKazuma MATSUI
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Abstract
A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.
Claims20
A dry etching method comprising a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched including an etching target being a target of etching with the etching gas to etch the etching target without using plasma,
- wherein the etching target contains copper;
- and
- wherein the dry etching step is performed under temperature conditions of from 140° C. to 300° C.
Dependencies are inferred from the claim text.